PEDOT∶PSS/MABr复合空穴传输层对准二维钙钛矿发光二极管的性能提升

Performance Enhancement of Quasi-two-dimensional Perovskite Light-emitting Diodes by PEDOT∶PSS/MABr Composite Hole Transport Layer

摘要

钙钛矿发光二极管(PeLED)因其卓越的性能被广泛应用于光电领域中.空穴传输层(HTL)对器件的性能起着至关重要的作用.通过向PEDOT∶PSS掺杂MABr作为复合空穴传输层,制备了准二维钙钛矿发光二极管,并研究了器件的光电性能.结果表明,掺杂MABr后,器件的最高亮度及最大电流效率均有显著提升,分别提高至6901 cd/m²和6.70 cd/A.这主要是由于PEDOT: PSS/MABr复合空穴传输层作为基底改善了钙钛矿薄膜的形貌,钝化了钙钛矿薄膜的缺陷,抑制了复合空穴传输层/钙钛矿发射层(EML)界面处激子的猝灭.此外,MABr的掺入增强了复合空穴传输层的空穴传输能力,提升了激子复合效率,进而提高了器件的整体性能.

Abstract

Perovskite light-emitting diodes (PeLEDs) are widely used in the field of optoelectronics due to their excellent performance. The hole transport layer (HTL) plays a crucial role in the device performance. In this paper, quasi-two-dimensional perovskite light-emitting diodes were prepared by doping MABr into PEDOT∶PSS as a composite HTL, and the optoelectronic performance of the devices was investigated. The results show that the maximum brightness and the maximum current efficiency of the devices were significantly improved by MABr doping to 6901 cd/m² and 6.70 cd/A, respectively. This is mainly attributed to the fact that the PEDOT: PSS/MABr composite HTL as a substrate improves the morphology of the perovskite film, passivates defects in the perovskite film, and suppresses the HTL/perovskite emissive layer (EML) exciton burst at the HTL/EML interface. In addition, the doping of MABr enhances the hole transport ability and exciton complex efficiency of HTL, which in turn improves the overall performance of the device. The results in this paper provide strong support for the development of perovskite light-emitting diodes.

关键词

钙钛矿发光二极管 / 准二维钙钛矿 / 空穴传输层 / PEDOT: PSS / MABr

Key words

perovskite light-emitting diode / quasi-two-dimensional perovskite / hole transport layer / PEDOT: PSS / MABr

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基金资助

国家自然科学基金(12275074)

湖北工业大学绿色工业科技引领计划项目(XJ2021003702)