Fe₃GaTe₂/Bi₂Te₃范德瓦尔斯异质结构中界面电荷转移诱导的电子迁移率提升

Interfacial Charge-Transfer Boost of Electron Mobility in Fe₃GaTe₂/Bi₂Te₃ van der Waals Heterostructures

摘要

磁性材料与拓扑绝缘体相结合的范德瓦尔斯异质结构为调控自旋和电荷输运提供了一个强大的平台.在此,我们报道了对Fe₃GaTe₂/Bi₂Te₃(FGT/BT)异质结构的系统研究.在该异质结构中,界面电荷转移在调控电子输运方面起着主导作用,且并未提高整体的磁有序温度.通过详细的磁输运测量和双载流子Drude分析,我们发现在低温下电子迁移率显著提升,最高可达1.2×10^-4cm²V^-1s^-1,远超单独的FGT材料.这种迁移率的改善归因于来自n型Bi₂Te₃的界面电荷重新分布,这有效抑制了杂质散射.值得注意的是,居里温度保持在约360K不变,与单独的FGT相同,这与先前报道的采用本征拓扑绝缘体的异质结构形成鲜明对比,在那些结构中,强自旋-轨道耦合提高了T_c.我们的工作确立了界面电荷转移是一种独立且有效的机制,可在磁-拓扑异质结构中实现高迁移率输运的调控,同时保持其本征磁特性.这为实现高性能自旋电子器件提供了一条有前景的途径.

Abstract

Van der Waals heterostructures combining magnetic materials and topological insulators offer a powerful platform for engineering spin and charge transport. Here, we report a systematic study of the Fe₃GaTe₂/Bi₂Te₃ (FGT/BT) heterostructure, in which interfacial charge transfer plays a dominant role in modulating electron transport without enhancing the global magnetic ordering temperature. Through detailed magnetotransport measurements and a two-carrier Drude analysis, we reveal a dramatic enhancement of electron mobility, reaching up to 1.2×10⁴ cm²V^-1s^-1 at low temperatures, far exceeding that of individual FGT. This mobility improvement is attributed to interfacial charge redistribution from the n-type Bi₂Te₃, which effectively suppresses impurity scattering. Notably, the Curie temperature remains unchanged at ~360 K, identical to that of individual FGT, in stark contrast to previously reported heterostructures employing intrinsic topological insulators where strong spin-orbit coupling enhances T_c. Our work establishes interfacial charge transfer as an independent and effective mechanism for engineering high-mobility transport in magnetic-topological heterostructures, while preserving their intrinsic magnetic properties. This offers a promising route toward high-performance spintronic devices.

关键词

范德瓦尔斯异质结构 / 二维材料 / 界面电荷转移 / 电子迁移率 / 磁输运

Key words

Van der Waals heterostructures / Two-dimensional materials / Interfacial charge transfer / Electron mobility / Magnetotransport

参考文献

[1] G.R. Bhimanapati, Z. Lin, V. Meunier, Y. Jung, J. Cha, S. Das, D. Xiao, Y. Son, M.S. Strano, V.R. Cooper, L. Liang, S.G. Louie, E. Ringe, W. Zhou, S.S. Kim, R.R. Naik, B.G. Sumpter, H. Terrones, F. Xia, Y. Wang, J. Zhu, D. Akinwande, N. Alem, J.A. Schuller, R.E. Schaak, M. Terrones, J.A. Robinson, ACS Nano, 9(2015), 11509

[2] K. Burch, D. Mandrus, J. Park, Nature, 563(2018), 47

[3] K.S. Novoselov, A.K. Geim, S.V. Morozov, D. Jiang, Y. Zhang, S.V. Dubonos, I.V. Grigorieva, A.A. Firsov, Science, 306(2004), 666

[4] C. Gong, L. Li, Z. Li, H. Ji, A. Stern, Y. Xia, T. Cao, W. Bao, C. Wang, Y. Wang, Z.Q. Qiu, R.J. Cava, S.G. Louie, J. Xia, X. Zhang, Nature, 546(2017), 26

[5] M. Mogi, T. Nakajima, V. Ukleev, A. Tsukazaki, R. Yoshimi, M. Kawamura, K.S. Takahashi, T. Hanashima, K. Kakurai, T. Arima, M. Kawasaki, Y. Tokura, Phys. Rev. Lett., 123(2019), 016804

[6] V. Gupta, R. Jain, Y. Ren, X.S. Zhang, H.F. Alnaser, A. Vashist, V.V. Deshpande, D.A. Muller, D. Xiao, T.D. Sparks, D.C. Ralph, Nano Lett., 22(2022), 7166

[7] B. Huang, G. Clark, E. Navarro—Moratalla, D.R. Klein, R. Cheng, K.L. Seyler, D. Zhong, E. Schmidgall, M.A. McGuire, D.H. Cobden, W. Yao, D. Xiao, P. Jarillo—Herrero, X. Xu, Nature, 546(2017), 270

[8] M. Gibertini, M. Koperski, A.F. Morpurgo, K.S. Novoselov, Nat. Nanotechnol., 14(2019), 408.

[9] Q.H. Wang, A. Bedoya—Pinto, M. Blei, A.H. Dismukes, A. Hamo, S. Jenkins, M. Koperski, Y. Liu, Q.—C. Sun, E.J. Telford, H.H. Kim, M. Augustin, U. Vool, J.—X. Yin, L.H. Li, A. Falin, C.R. Dean, F. Casanova, R.F.L. Evans, M. Chshiev, A. Mishchenko, C. Petrovic, R. He, L. Zhao, A.W. Tsen, B.D. Gerardot, M. Brotons—Gisbert, Z. Guguchia, X. Roy, S. Tongay, Z. Wang, M.Z. Hasan, J. Wrachtrup, A. Yacoby, A. Fert, S. Parkin, K.S. Novoselov, P. Dai, L. Balicas, E.J.G. Santos, ACS Nano, 16(2022), 6960

[10] A.M. Ruiz, D.L. Esteras, D. López—Alcalá, J.J. Baldoví, Nano Lett., 24(2024), 7886

[11] M. Wang, K. Zhu, B. Lei, Y. Deng, T. Hu, D. Song, H. Du, M. Tian, Z. Xiang, T. Wu, X. Chen, Nano Lett., 24(2024), 4141

[12] G. Zhang, F. Guo, H. Wu, X. Wen, L. Yang, W. Jin, W. Zhang, H. Chang, Nat. Commun., 13(2022), 5067

[13] G. Zhang, H. Wu, L. Yang, Z. Chen, W. Jin, B. Xiao, W. Zhang, C. Song, H. Chang, J. Am. Chem. Soc., 146(2024), 34070

[14] K. Ni, J. Zhou, Y. Chen, H. Cheng, Z. Cao, J. Guo, A. Söll, X. Hou, L. Shan, Z. Sofer, M. Yang, Y. Yue, J. Xu, M. Tian, W. Gao, Y. Jiang, Y. Fang, X. Liu, ACS Nano, 19(2025), 2624

[15] D. Kumar, A. Lakhani, J. Phys.: Condens. Matter, 33(2020), 115703

[16] C.H. Li, O.M.J. Van‘t Erve, C. Yan, L. Li, B.T. Jonker, Sci. Rep., 8(2018), 10265

[17] Y.L. Chen, J.G. Analytis, J.—H. Chu, Z.K. Liu, S.—K. Mo, X.L. Qi, H.J. Zhang, D.H. Lu, X. Dai, Z. Fang, S.C. Zhang, I.R. Fisher, Z. Hussain, Z.—X. Shen, Science, 325(2009), 178

[18] Y. Yang, Z. Gao, H. Xue, L. Zhang, M. He, Z. Yang, R. Singh, Y. Chong, B. Zhang, H. Chen, Nature, 565(2019), 622

[19] B. Huang, M.A. McGuire, A.F. May, D. Xiao, P. Jarillo—Herrero, X. Xu, Nat. Mater., 19(2020), 1276

[20] E.—M. Choi, T. Kim, B.W. Cho, Y.H. Lee, ACS Nano, 17(2023), 15656

[21] J.F. Sierra, J. Fabian, R.K. Kawakami, S. Roche, S.O. Valenzuela, Nat. Nanotechnol., 16(2021), 856

[22] D. Zhong, K.L. Seyler, X. Linpeng, N.P. Wilson, T. Taniguchi, K. Watanabe, M.A. McGuire, K.—M.C. Fu, D. Xiao, W. Yao, X. Xu, Nat. Nanotechnol., 15(2020), 187

[23] X. Xu, J.—X. Yin, W. Ma, H.—J. Tien, X.—B. Qiang, P.V.S. Reddy, H. Zhou, J. Shen, H.—Z. Lu, T.—R. Chang, Z. Qu, S. Jia, Nat. Commun., 13(2022), 1197

[24] X. Zhu, J. Wu, X. Luo, H. Miao, J. Liu, Z. Mo, H. Xu, S. Shi, X. Wang, Z. Yuan, J. Environ. Chem. Eng., 13(2025), 119807

[25] J. Li, Z. Li, X. Liu, C. Li, Y. Zheng, K.W.K. Yeung, Z. Cui, Y. Liang, S. Zhu, W. Hu, Y. Qi, T. Zhang, X. Wang, S. Wu, Nat. Commun., 12(2021), 1224

[26] Q. Cao, J. Dai, Z. Hao, B. Paulus, S. Eigler, X. Chen, Angew. Chem. Int. Ed., 63(2024), e202415922

[27] H. Sang, W. Wang, Z. Wang, M. Hong, C. Zhang, S. Xie, H. Ge, F. Yan, Z. Wang, Y. Ouyang, Y. Liu, J. Wu, W. Liu, X. Tang, Adv. Funct. Mater., 33(2023), 2210213

[28] Y.—T. Hsu, K. Park, E.—A. Kim, Phys. Rev. B, 96(2017), 235433

[29] W. Ci, T. Liu, Y. Song, Z. Ma, Y. Wang, J. Shen, R. Yang, W. Xue, X. Xu, Acta Phys. Sin., 75(2026), 060711

[30] X. Liang, F. Chen, L. Yang, T. Yang, P. Xiao, Y. Liu, Z. Wang, W. Xiao, J. Phys.: Condens. Matter, 37(2025), 155001

[31] X. Guo, J. Li, W. Li, M. Chen, Q. Ye, S. Wu, S. Li, Appl. Phys. Lett., 126(2025), 102402

[32] P.R. Sharma, B. Jang, G. Zhang, W. Jin, H. Chang, J. Hong, Appl. Surf. Sci. Adv., 29(2025), 100847

[33] W. Cho, Y. Kang, J. Cha, D.H.D. Lee, D.H. Kiem, J. Oh, Y. Joo, S. Yer, D. Kim, J. Park, C. Kim, Y. Yang, Y. Kim, M.J. Han, H. Yang, Adv. Mater., 36(2024), 2402040

[34] F. Katmis, V. Lauter, F.S. Nogueira, B.A. Assaf, M.E. Jamer, P. Wei, B. Satpati, J.W. Freeland, I. Eremin, D. Heiman, P. Jarillo—Herrero, J.S. Moodera, Nature, 533(2016), 513

[35] Q.L. He, H. Liu, M. He, Y.H. Lai, H. He, G. Wang, K.T. Law, R. Lortz, J. Wang, I.K. Sou, Nat. Commun., 5(2014), 4247

[36] B.K. Gupta, R. Sultana, S. Singh, V. Singh, G. Awana, A. Gupta, B. Singh, A.K. Srivastava, O.N. Srivastava, S. Auluck, V.P.S. Awana, Sci. Rep., 8(2018), 9205

[37] D. Mao, J. Yang, M. Han, X. Huang, J. Wang, B. Jia, Z. Wang, X. Xu, L. Xie, Y. Zhou, G. Li, G.W. Ho, J. He, Sci. Adv., 11(2025), eadz1019

[38] G. Hu, H. Guo, S. Lv, L. Li, Y. Wang, Y. Han, L. Pan, Y. Xie, W. Yu, K. Zhu, Q. Qi, G. Xian, S. Zhu, J. Shi, L. Bao, X. Lin, W. Zhou, H. Yang, H. Gao, Adv. Mater., 36(2024), 2403154

[39] L. Jiang, Q. Li, J. Li, H. Guo, C. Wu, Z. Luo, R. Xiong, M. Zeng, Z. Luo, J. Zhao, Z. Chen, Z. Zhang, H. Wu, Nano Lett., 25(2025), 9712

[40] J. Tang, Y. Wu, W. Wang, L. Kong, B. Lv, W. Wei, J. Zang, M. Tian, H. Du, Nat. Nanotechnol., 16(2021), 1086

[41] X. Xu, J.—X. Yin, Z. Qu, S. Jia, Rep. Prog. Phys., 86(2023), 114502

[42] M. Tanaka, Y. Fujishiro, M. Mogi, Y. Kaneko, T. Yokosawa, N. Kanazawa, S. Minami, T. Koretsune, R. Arita, S. Tarucha, M. Yamamoto, Y. Tokura, Nano Lett., 20(2020), 7476

[43] W. Gao, N. Hao, F.—W. Zheng, W. Ning, M. Wu, X. Zhu, G. Zheng, J. Zhang, J. Lu, H. Zhang, C. Xi, J. Yang, H. Du, P. Zhang, Y. Zhang, M. Tian, Phys. Rev. Lett., 118(2017), 256601

[44] A. Zhu, Z. Chen, Y. Han, M. Zhu, H. Wang, M. Han, L. Li, X. Liu, G. Zheng, X. Zhu, W. Gao, M. Tian, Sci. China Phys. Mech. Astron., 66(2023), 276813

[45] Z. Hu, X. Liu, P.L. Hernández‐Martínez, S. Zhang, P. Gu, W. Du, W. Xu, H.V. Demir, H. Liu, Q. Xiong, InfoMat, 4(2022), e12290

[46] Z. Li, X. Lin, Y. Zou, F. Tan, W. Zhu, L. Zhu, Adv. Funct. Mater., 35(2025), e12048