ZrSe₂ 薄层中纯载流子掺杂诱导的半导体-金属转变

Pure Carrier Doping Induced Semiconductor-Metal Transition in ZrSe ₂ Thin Flakes by Solid Ionic Gating

摘要

在二维系统中,实现精确且可逆的载流子浓度调控对于探索奇异物理特性和开发先进功能器件至关重要.基于固态锂离子导体的场效应晶体管(SIC-FET)已成为一种强有力的调控方法,但是由于锂离子(Li⁺)的嵌入,载流子调控往往会与结构相变耦合.本工作通过固态离子导体场效应晶体管,在二硒化锆(ZrSe₂)薄片中实现了明确的电场调控半导体-金属相变.霍尔效应测试证实载流子浓度实现了连续且显著的提升,而原位X射线衍射结果表明,在 Li⁺ 嵌入过程中材料未发生结构相变.半导体-金属相变过程中随温度变化的电阻特性可通过载流子掺杂模型得到良好拟合.本研究实现了载流子掺杂与晶格重构的完全解耦,为利用固态离子门控研究二维材料中本征的载流子掺杂效应提供了理想平台.

Abstract

Precise and reversible carrier concentration modulation in two-dimensional systems is essential for exploring their exotic physical properties and advanced functional device development. Solid lithium ionic conductor based field-effect transistors (SIC-FETs) have emerged as a powerful tuning approach, yet carrier regulation is universally coupled to structural phase transitions owing to Li⁺ insertion. Here, we realize a well-defined electric-field-tuned semiconductor-metal transition in ZrSe₂ thin flakes via SIC-FET. Hall effect measurements confirm a continuous, significant increment of carrier concentration, while in-situ X-ray diffraction reveals no structural phase transition during Li⁺ insertion. Temperature-dependent resistance during the semiconductor-metal transition process can be well fitted using a carrier doping model. Our work achieves complete decoupling of carrier doping from lattice reconstruction, providing an ideal platform for investigating intrinsic carrier doping effects in 2D materials by solid ionic gating.

关键词

固体离子调控 / ZrSe₂ 薄片 / 半导体-金属相变 / 载流子掺杂

Key words

Solid ionic gating / ZrSe₂ thin flake / Semiconductor-metal transition / Carrier doping

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基金资助

National Key Research and Development Program of the Ministry of Science and Technology of China(2022YFA1602601)

National Natural Science Foundation of China(12004365)

Hefei National Laboratory Self-Deployed Project(ZB2025020200)

Anhui University startup project(S020318001/023)