集成电路高端光刻胶材料纯化研究进展

The research progress in purification of high-end photoresist materials for integrated circuits

摘要

光刻胶(又称光致抗蚀剂)是集成电路制造的核心材料,其纯度直接影响光刻图案的成像质量和器件合格率。随着集成电路进入极紫外光刻(EUVL)时代,对包括光刻胶在内的各种湿电子化学品性能和纯度提出了更高的要求。为此,光刻胶原料和光刻胶溶液纯化处理已成为光刻技术的重要组成部分。在简要介绍光刻胶制备、光刻工艺和相关标准的基础上,着重介绍了光刻胶树脂、溶剂、光产酸剂及光刻胶溶液纯化处理技术的研究进展,分析了膜分离、离子交换、吸附、溶剂萃取等主流方法的适用场景与技术瓶颈。针对传统纯化工艺中存在的处理周期长、效率低等问题,进一步探讨了膜材料功能化及其与多种分离方法的耦合策略,并展望了陶瓷膜在高选择性、高稳定性纯化工艺中的潜在应用,为未来高纯度光刻胶材料的绿色高效制备提供技术思路和发展方向。

Abstract

Photoresist (also known as a photosensitive resist) is a critical material in integrated circuit manufacturing. Its purity directly affects the imaging quality of lithographic patterns and the yield of semiconductor devices. With the transition to the era of extreme ultraviolet lithography (EUVL), increasingly stringent requirements have been placed on the performance and purity of wet electronic chemicals, including photoresists. As a result, the purification of photoresist raw materials and photoresist solutions has become a vital component of lithographic processes. Following a brief overview of photoresist preparation, lithographic procedures, and relevant technical standards, recent advances in the purification of photoresist resins, solvents, photoacid generators, and photoresist solutions are summarized. Key purification methods such as membrane separation, ion exchange, adsorption, and solvent extraction are evaluated in terms of their application scope and technical limitations. To address the limitations of conventional processes, including long processing times and low efficiency, strategies involving functionalized membrane materials and combined purification techniques have been investigated. The potential use of ceramic membranes for achieving high selectivity and stability in purification processes is also discussed, providing technical insights and future directions for the green and efficient production of high-purity photoresist materials.

关键词

集成电路 / 光刻胶 / 纯化技术 / 光刻工艺 / 工艺节点 / 研究进展

Key words

integrated circuit / photoresist / purification technology / photolithography process / process node / research progress

参考文献

[1] LIN B J. Immersion and EUV lithography: two pillars to sustain single-digit nanometer nodes[C]// Proceedings of the 2023 International Symposium on Physical Design. Virtual Event USA. ACM, 2023: 104-104.

[2] LEVINSON H J. High-NA EUV lithography: current status and outlook for the future[J]. Japanese Journal of Applied Physics, 2022, 61: SD0803.

[3] NEISSER M. International roadmap for devices and systems lithography roadmap[J]. Journal of Micro/Nanopatterning, Materials, and Metrology, 2021, 20: 044601.

[4] ITANI T, KOZAWA T. Resist materials and processes for extreme ultraviolet lithography[J]. Japanese Journal of Applied Physics, 2013, 52(1R): 010002.

[5] BURGESS N, DAMPER R I. The inadequacy of the stuck-at fault model for testing MOS LSI circuits: a review of MOS failure mechanisms and some implications for computer-aided design and test of MOS LSI circuits[J]. Software & Microsystems, 1984, 3(2): 30.

[6] KOHYAMA T, FOUBERT P. Updated UPE filter design for point-of-use EUV CAR photoresist filtration for defect improvement[C]// Advances in Patterning Materials and Processes XLI. San Jose, USA. SPIE, 2024: 54.

[7] DEL BARRIO J, SÁNCHEZ-SOMOLINOS C. Light to shape the future: from photolithography to 4D printing[J]. Advanced Optical Materials, 2019, 7(16): 1900598.

[8] YUANXUN C, ZHIWEI Y. Comparative analysis of positive photoresist and negative photoresist in nanoimprintlithography technology[J]. Materials Research, 2024, 4(4).

[9] HASSAAN M, SALEEM U, SINGH A, et al. Recent advances in positive photoresists: mechanisms and fabrication[J]. Materials, 2024, 17(11): 2552.

[10] HENDERSON C L. Photoresists and advanced patterning[M]// Polymer Science: A Comprehensive Reference. Amsterdam: Elsevier, 2012: 37-76.

[11] 陈颖, 黄润坤, 吴頔, 等. 全球光刻胶产业现状及布局[J]. 中国集成电路, 2023, 32(5): 22-26.

[12] CHEN Y, HUANG R K, WU D, et al. The current situation and layout of the photoresist industry[J]. China Integrated Circuit, 2023, 32(5): 22-26.

[13] WANG L, YANG J, CHENG W H, et al. Progress on polymer composites with low dielectric constant and low dielectric loss for high-frequency signal transmission[J]. Frontiers in Materials, 2021, 8: 774843.

[14] SCHMID C. Printed circuit board manufacturing process and printed circuit board: US20240431034[P]. 2024-12-26.

[15] PENG C Y, LAU J H, KO C T, et al. Development of high-density hybrid substrate for heterogeneous integration[C]// 2021 IEEE CPMT Symposium Japan (ICSJ). Kyoto, Japan. IEEE, 2021: 5-8.

[16] LI L, LIU X, PAL S, et al. Extreme ultraviolet resist materials for sub-7 nm patterning[J]. Chemical Society Reviews, 2017, 46(16): 4855-4866.

[17] 王娅娴. 光产酸剂及光刻工艺对 KrF 光刻胶性能影响研究[D]. 北京: 北京化工大学, 2022.

[18] WANG Y X. Study on the effect of photo acid generator and photolithography process on the performance of KrF photoresist[D]. Beijing: Beijing University of Chemical Technology, 2022.

[19] ITO T, OKAZAKI S. Pushing the limits of lithography[J]. Nature, 2000, 406(6799): 1027-1031.

[20] PARK S Y, LEE S, YANG J, et al. Patterning quantum dots via photolithography: a review[J]. Advanced Materials, 2023, 35(41): e2300546.

[21] BRAMBLEY D, MARTIN B, PREWETT P D. Microlithography: an overview[J]. Advanced Materials for Optics and Electronics, 1994, 4(2): 55-74.

[22] MAUTZ K E. Environmental and substrate material factors' effect on metal lithography corrosion[J]. Process, Equipment, and Materials Control in Integrated Circuit Manufacturing III, 1997, 3213: 220-229.

[23] MING Z, DENG H, ZHANG B C. Investigation of bump defects formed in back end of line for 28 nm technological node[J]. Surface and Interface Analysis, 2016, 48(10): 1072-1079.

[24] CAI C, PADHI D, SEAMONS M, et al. Defect gallery and bump defect reduction in the self-Aligned Double Patterning module[C]// 2010 IEEE/SEMI Advanced Semiconductor Manufacturing Conference (ASMC). San Francisco, CA, USA. IEEE, 2010: 129-132.

[25] TEWKSBURY S K. Fabrication defects[M]// Wafer-Level Integrated Systems. Boston, MA: Springer US, 1989: 75-114.

[26] GOSWAMI S, HALL S, WYKO W, et al. In-line photoresist defect reduction through failure mode and root-cause analysis: topics/categories: EO (equipment optimization)/DR (defect reduction)[C]// 2020 31st Annual SEMI Advanced Semiconductor Manufacturing Conference (ASMC). Saratoga Springs, NY, USA. IEEE, 2020: 1-5.

[27] GUPTA S N, BAGCHI A K, KUNDU N N. Defects in photomasks[J]. Microelectronics Journal, 1985, 16(1): 22-40.

[28] 张凯, 张念椿, 魏永明, 等. 电子化学品分离纯化材料制备及其应用应用技术进展[J]. 山东化工, 2022, 51(22): 73-77.

[29] ZHANG K, ZHANG N C, WEI Y M, et al. Progress in preparation and application of separation and purification materials for electronic chemicals[J]. Shandong Chemical Industry, 2022, 51(22): 73-77.

[30] SARANGAN A. Nanofabrication: Principles to Laboratory Practice[M]. Boca Raton: CRC Press, 2017.

[31] OSBURN C, BERGER H, DONOVAN R, et al. The effects of contamination on semiconductor manufacturing yield[J]. The Journal of Environmental Sciences, 1988, 31(2): 45-57.

[32] 崔杰, 翟博涛. 国内外光刻胶发展及应用探讨[J]. 新材料产业, 2021(5): 33-35.

[33] CUI J, ZHAI B T. Development and application of photoresist at home and abroad[J]. Advanced Materials Industry, 2021(5): 33-35.

[34] 高嫒嫒, 张广平, 宋宽广, 等. 超净高纯试剂的制备、检测及包装技术进展[J]. 化学试剂, 2014, 36(8): 713-718.

[35] GAO A A, ZHANG G P, SONG K G, et al. Progress of preparation, detection, packaging technology about ultra-clean and high-purity reagents[J]. Chemical Reagents, 2014, 36(8): 713-718.

[36] 詹家荣. 我国超净高纯化学试剂产业的基本状况[J]. 化学试剂, 2010, 32(10): 955-960.

[37] ZHAN J R. Present status on development of ultra-pure chemical reagents in domestic markets[J]. Chemical Reagents, 2010, 32(10): 955-960.

[38] MARVEL C S, MCCAIN G H. Polymerization of esters of cinnamic Acid 1[J]. Journal of the American Chemical Society, 1953, 75(13): 3272-3273.

[39] MARTIN H, WAGNER H M. Azide resin photolithographic composition: US2852379[P]. 1958-09-16.

[40] MARTIN H. Light sensitive diazo compound and binder composition: US2848328[P]. 1958-08-19.

[41] MINSK L M, VAN DEUSEN W P, ROBERTSON E M. Photosensitization of polymeric cinnamic acid esters: US2610120[P]. 1952-9-9.

[42] KOMATSU T, SAKURAGI H, NAGASAWA J, et al. Photochemical behaviour of poly(vinyl alcohol) bearing p-phenylenediacrylate groups[J]. Polymer, 1998, 39(11): 2169-2173.

[43] NAGASAWA J, TAMAKI T, ICHIMURA K. Photosensitive poly(vinyl alcohol) bearing N-(1-pyridinio) benzamidate groups[J]. Polymers for Advanced Technologies, 1993, 4(8): 514-518.

[44] PACANSKY J, LYERLA J R. Photochemical decomposition mechanisms for AZ-type photoresists[J]. IBM Journal of Research and Development, 1979, 23(1): 42-55.

[45] 魏玮, 刘敬成, 李虎, 等. 微电子光致抗蚀剂的发展及应用[J]. 化学进展, 2014, 26(11): 1867-1888.

[46] WEI W, LIU J C, LI H, et al. Development and application of microelectronic photoresist[J]. Progress in Chemistry, 2014, 26(11): 1867-1888.

[47] ITO H, WILLSON C G, FRECHET J H. New UV resists with negative or positive tone[C]// 1982 Symposium on VLSI Technology Digest of Technical Papers. Oiso, Japan. IEEE, 1982: 86-87.

[48] SANDERS D P. Advances in patterning materials for 193 nm immersion lithography[J]. Chemical Reviews, 2010, 110(1): 321-360.

[49] ITO H. Chemical amplification resists for microlithography[M]// Microlithography · Molecular Imprinting. Berlin, Heidelberg: Springer, 2005: 37-245.

[50] SHIRAI M, MAKI K, OKAMURA H, et al. Non-chemically amplified EUV resist based on PHS[J]. Journal of Photopolymer Science and Technology, 2009, 22(1): 111-116.

[51] MATSUZAWA N N, OIZUMI H, MORI S, et al. Theoretical estimation of absorption coefficients of various polymers at 13 nm[J]. Microelectronic Engineering, 2000, 53(1/2/3/4): 671-674.

[52] KWARK Y J, BRAVO-VASQUEZ J P, OBER C K, et al. Novel silicon-containing polymers as photoresist materials for EUV lithography[C]// Advances in Resist Technology and Processing XX. Santa Clara, CA. SPIE, 2003: 1204.

[53] DAI J Y, OBER C K, WANG L, et al. Organoelement resists for EUV lithography[J]. Advances in Resist Technology and Processing XIX, 2002, 4690: 1193.

[54] DE SILVA A, OBER C K. Hydroxyphenylbenzene derivatives as glass forming molecules for high resolution photoresists[J]. Journal of Materials Chemistry, 2008, 18(16): 1903-1910.

[55] DE SILVA A, FELIX N M, OBER C K. Molecular glass resists as high-resolution patterning materials[J]. Advanced Materials, 2008, 20(17): 3355-3361.

[56] CHANG S W, AYOTHI R, BRATTON D, et al. Sub-50 nm feature sizes using positive tone molecular glass resists for EUV lithography[J]. Journal of Materials Chemistry, 2006, 16(15): 1470-1474.

[57] THIYAGARAJAN M, GONSALVES K E, DEAN K, et al. Design and performance of EUV resist containing photoacid generator for sub-100 nm lithography[J]. Journal of Nanoscience and Nanotechnology, 2005, 5(7): 1181-1183.

[58] SATYANARAYANA V V, KESSLER F, SINGH V, et al. Radiation-sensitive novel polymeric resist materials: iterative synthesis and their EUV fragmentation studies[J]. ACS Applied Materials & Interfaces, 2014, 6(6): 4223-4232.

[59] CARDINEAU B, DEL RE R, AL-MASHAT H, et al. EUV resists based on tin-oxo clusters[J]. Advances in Patterning Materials and Processes XXXI, 2014, 9051: 90511B.

[60] OUYANG C Y, CHUNG Y S, LI L, et al. Non-aqueous negative-tone development of inorganic metal oxide nanoparticle photoresists for next generation lithography[J]. Advances in Resist Materials and Processing Technology XXX, 2013, 8682: 86820R.

[61] TRIKERIOTIS M, KRYSAK M, CHUNG Y S, et al. A new inorganic EUV resist with high-etch resistance[J]. Extreme Ultraviolet (EUV) Lithography III, 2012: 83220U.

[62] BENOIT D, SAFIR A, CHANG H T, et al. Photoresist polymer compositions: US7510817[P]. 2009-03-31.

[63] LEE T Y, YU C Y, HSU M Y, et al. Copolymers with well-controlled molecular weight and low polydispersity for 193 nm photoresists[J]. Journal of Photopolymer Science and Technology, 2003, 16(4): 483-487.

[64] IM K, LEE C H, KIM M, et al. Understanding and control of polymer distribution in photoresists using liquid chromatography for enhanced lithography performance[J]. ACS Applied Polymer Materials, 2023, 5(12): 10091-10096.

[65] OIKAWA T, IKAWA E. Method for producing a copolymer for photoresist: US8455596[P]. 2013-06-04.

[66] SHIGERU K. Polymer for photoresist containing lactone skeleton and solution of polymer for photoresist containing lactone skeleton: JP2005068342A [P]. 2005-03-17.

[67] 叶永达, 龚本民. 提高聚乙烯醇肉桂酸酯光致抗蚀剂性能的途径[J]. 化学通报, 1980, 43(2): 15-16.

[68] YE Y D, GONG B M. Ways to improve the properties of polyvinyl cinnamate photoresist[J]. Chemistry, 1980, 43(2): 15-16.

[69] 陈鹏, 马潇, 顾大公, 等. 一种去除合成树脂中的小分子物质的方法: CN112679631A[P]. 2021-04-20.

[70] CHEN P, MA X, GU D G, et al. A method for removing small molecule substances from synthetic resins: CN112679631[P]. 2021-04-20.

[71] 顾大公, 马潇, 余绍山, 等. 一种光刻胶树脂及其制备方法: CN112794941A[P]. 2021-05-14.

[72] GU D G, MA X, YU S S, et al. A photoresist resin and its preparation method: CN112794941A[P]. 2021-05-14.

[73] WATANABE H, HAYAMIZU H, KISHIMURA M. Process for producing photoresist polymeric compounds: US7816471[P]. 2010-10-19.

[74] RAMAN M D, WANAT S F, COOK M M, et al. Graded novolac resin copolymers and photoresist compositions derived therefrom. CN1278336A[P]. 2000-12-27.

[75] YONEKURA I, HONDA F, ITO Y, et al. Process for production of photoresist resins: US20100216959[P]. 2010-08-26.

[76] UENO T, ALLEN R D, THACKERAY J. Chemistry of photoresist materials[M]// Microlithography. Third edition. Boca Raton: CRC Press, 2020: 327-418.

[77] DURHAM D L, RAHMAN M D. Metal ion reduction in novolak resins and photoresists: US5594098A[P]. 1997-01-14.

[78] RAHMAN M D. Metal ion reduction in novolak resins solution in PGMEA by chelating ion exchange resin: US5614352[P]. 1997-03-25.

[79] RAHMAN M D. Metal ion reduction in novolak resin solution using an anion exchange resin: US6043002[P]. 2000-03-28.

[80] MATSUMOTO T, AKAHO M. Process for purifying vinylphenol polymers for use as photoresist materials: US5284930[P]. 1994-02-08.

[81] ZAMPINI A, COLEY S M. Resin purification process: US5939511[P]. 1999-08-17.

[82] WANAT S F, MCKENZIE D S, RAHMAN M D. Continuous metal removal technique for resist resins[J]. Advances in Resist Technology and Processing XVIII, 2001, 4345: 455.

[83] OHBA K, TAKANO K, IIDA M, et al. Purification process for hydrolysable organic solvent: US10913058[P]. 2021-02-09.

[84] YOSHIMURA Y, YOKOTA H, NAKAMURA A. Method and apparatus for producing chelate resin, and method for purifying to-be-treated liquid: US20200369795[P]. 2020-11-26.

[85] GNANI PEER MOHAMED S I, ARABI SHAMSABADI A, KAVOUSI S, et al. Metal ions removal from organic solvents using MXene-based membranes[J]. ACS Applied Engineering Materials, 2023, 1(10): 2452-2457.

[86] WANG G, ENTEZARIAN M, GIEGER B, et al. 3M immobilized micro-bed ion exchange resin bed technology treatment of PGMEA[C]// 2020 International Workshop on Advanced Patterning Solutions (IWAPS). Chengdu, China. IEEE, 2020: 1-4.

[87] TSENG H M, LING X P. Trace metal removal from microlithography process chemicals: Part I. photoresist solvents[J]. Advances in Resist Technology and Processing XIX, 2002, 4690: 809.

[88] KOHYAMA T, KANEKO F, LY S, et al. Development of novel purifiers with appropriate functional groups based on solvent polarities at bulk filtration[J]. Advances in Patterning Materials and Processes XXXIV, 2017, 10146: 101461J.

[89] ENTEZARIAN M, GEIGER B. The effect of materials selection on metals reduction in propylene glycol methyl ether acetate, PGMEA[J]. Metrology, Inspection, and Process Control for Microlithography XXX, 2016, 9778: 97783H.

[90] KOHYAMA T. The filter adsorption mechanism in photoresist materials[J]. Advances in Resist Materials and Processing Technology XXIX, 2012, 8325: 83252I.

[91] AYYAVOO J, KIM I C, KWON Y N. Preparation of EVOH and aramid-modified polar nylon membrane for the removal of hard and soft colloidal particles[J]. Journal of Industrial and Engineering Chemistry, 2018, 65: 72-81.

[92] WU A W, KOHYAMA T, HAMZIK J, et al. Targeted removal of metallic contamination from lithography solvents using membrane purifiers[C]// Advances in Patterning Materials and Processes XXXV: San Jose, USA. SPIE, 2018: 44.

[93] CAPITANIO D, MIZUNO Y, LEE J. Metal ion removal from photoresist solvents[J]. Advances in Resist Technology and Processing XVI, 1999: 684.

[94] CHANIAGO Y D, HUSSAIN A, ANDIKA R, et al. Reactive pressure-swing distillation toward sustainable process of novel continuous ultra-high-purity electronic-grade propylene glycol monomethyl ether acetate manufacture[J]. ACS Sustainable Chemistry & Engineering, 2019, 7(22): 18677-18689.

[95] 王治军, 李红玲. 一种从 PGMEA 废液中提纯 PGMEA 的方法: CN104370742A[P]. 2016-01-06.

[96] WANG Z J, LI H L. A kind of method of PGMEA that purifies from PGMEA waste liquid: CN104370742A[P]. 2016-01-06.

[97] CHANIAGO Y D, HARVIANTO G R, BAHADORI A, et al. Enhanced recovery of PGME and PGMEA from waste photoresistor thinners by heterogeneous azeotropic dividing-wall column[J]. Process Safety and Environmental Protection, 2016, 103: 413-423.

[98] SAVAŞ-ALKAN A, ÇULFAZ-EMECEN P Z. Solvent recovery from photolithography wastes using cellulose ultrafiltration membranes[J]. Journal of Membrane Science, 2022, 647: 120261.

[99] LIU E, HEGAZY A, CHOI H, et al. Characterization of surface variation of chemically amplified photoresist to evaluate extreme ultraviolet lithography stochastics effects[J]. Journal of Photopolymer Science and Technology, 2021, 34(1): 63-70.

[100] MOON S Y, KIM J M. Chemistry of photolithographic imaging materials based on the chemical amplification concept[J]. Journal of Photochemistry and Photobiology C: Photochemistry Reviews, 2007, 8(4): 157-173.

[101] 武青青, 沈虎峻, 邓明森. 可见光引发剂研究进展[J]. 涂料工业, 2020, 50(8): 71-80.

[102] WU Q Q, SHEN H J, DENG M S. The research progress in visible light photoinitiaor[J]. Paint & Coatings Industry, 2020, 50(8): 71-80.

[103] CRIVELLO J V, REICHMANIS E. Photopolymer materials and processes for advanced technologies[J]. Chemistry of Materials, 2014, 26(1): 533-548.

[104] BARCLAY G G, MEDEIROS D R, SINTA R F. Thermal stability of sulfonate ester photoacid generators in phenolic matrixes[J]. Chemistry of Materials, 1995, 7(7): 1315-1324.

[105] ITO H, BREYTA G, HOFER D C, et al. Influence of acid generator structure on T-top formation in high-temperature bake processes for environmental stabilization[J]. Advances in Resist Technology and Processing XII, 1995, 2438: 53-60.

[106] FERREIRA L, MALIK S. Method of purifying photoacid generators for use in photoresist compositions: US6200480[P]. 2001-03-13.

[107] WU H, GONSALVES K E. Preparation of a photoacid generating monomer and its application in lithography[J]. Advanced Functional Materials, 2001, 11(4): 271-276.

[108] CHO H Y, SHARMA R, FOGLE J D. Ultrapure chemical components for next generation materials[C]// 2017 China Semiconductor Technology International Conference (CSTIC). Shanghai, China. IEEE, 2017: 1-3.

[109] 顾大公, 许东升, 齐国强, 等. 一种三苯基硫鎓盐中镁离子的纯化方法: CN113354565A[P]. 2021-09-07.

[110] GU D G, XU D S, QI G Q, et al. A method for the purification of magnesium ions from triphenylsulfonium salts: CN113354565A[P]. 2021-09-07.

[111] 程时建, 王杨爱, 刘志强, 等. 一种光刻胶用光致产酸剂的纯化方法: CN119874481A[P]. 2024-04-25.

[112] CHENG S J, WANG Y A, LIU Z Q, et al. A purification method for photo-acid generators for photoresists: CN119874481A[P]. 2024-04-25.

[113] DE SIMONE D, KLJUCAR L, DAS P, et al. 28nm pitch single exposure patterning readiness by metal oxide resist on 0.33NA EUV lithography[C]// Extreme Ultraviolet (EUV) Lithography XII. Online Only, USA. SPIE, 2021: 26.

[114] DINH C Q, NAGAHARA S, KUWAHARA Y, et al. EUV metal oxide resist development technology for improved sensitivity, roughness and pattern collapse margin for high volume manufacturing[J]. Journal of Photopolymer Science and Technology, 2022, 35(1): 87-93.

[115] RYU J H, SEO K J, RYU J S, et al. Report of latent contamination factors inducing lithographic variation[J]. Photomask Technology, 2008, 7122: 712215.

[116] SHIRAI M, KUROSIMA A, OKAMURA H, et al. EUV resist based on low molecular weight PHS[J]. Advances in Resist Materials and Processing Technology XXV, 2008, 6923: 692344.

[117] HUANG W S. Polymeric base additives for lithographic improvement in DUV resist system[J]. Advances in Resist Technology and Processing XVI, 1999, 3678: 1040.

[118] KAWATO S, MIURA K, AHN J, et al. Examining strategies to control gel-like defects in EUV patterning materials[C]// Advances in Patterning Materials and Processes XXXIX. San Jose, USA. SPIE, 2022: 53.

[119] XIAO A, KE K, YAMADA Y. Development of metal purifiers specific to lithography materials[C]// Advances in Patterning Materials and Processes XXXVIII. Online Only, USA. SPIE, 2021: 17.

[120] HOLDICH R, KOSVINTSEV S, CUMMING I, et al. Pore design and engineering for filters and membranes[J]. Philosophical Transactions of the Royal Society A: Mathematical, Physical and Engineering Sciences, 2006, 364(1838): 161-174.

[121] YU J H, FANG R, YAMADA Y. Metal purifier for TMAH developer solution[C]// Advances in Patterning Materials and Processes XL. San Jose, USA. SPIE, 2023: 47.

[122] CRONIN M, VITORINO N, MONREAL V, et al. Effects of nylon filter properties on contact-hole photoresist imaging performance and defectivity[J]. Advances in Resist Materials and Processing Technology XXIX, 2012, 8325: 83252M.

[123] UMEDA T, YAMANAKA T, IGUCHI N, et al. Microbridge reduction in negative-tone imaging at photoresist point-of-use filtration[J]. Advances in Patterning Materials and Processes XXXII, 2015, 9425: 942521.

[124] WU A W, TANG H, CONNER G, et al. Optimization of point-of-use filtration for metal oxide photoresist[C]// Advances in Patterning Materials and Processes XXXVIII. Online Only, USA. SPIE, 2021: 36.

[125] D’URZO L, BAYANA H, VANDEREYKEN J, et al. Continuous improvements of defectivity rates in immersion photolithography via functionalized membranes in point-of-use photochemical filtration[J]. Advances in Patterning Materials and Processes XXXIV, 2017, 10146: 101462A.

[126] YANG J, HUANG S, KOHYAMA T. Establishing a filter evaluation methodology targeting polymer purification of EUV lithography materials[C]// Advances in Patterning Materials and Processes XXXIX San Jose, California, USA. SPIE, 2022: 1205504.

[127] KUBO M, HUANG B, WU A, et al. Dual-function filtration to improve on-wafer defectivity performance for EUV applications[C]// Advances in Patterning Materials and Processes XLII. San Jose, USA. SPIE, 2025: 68.

[128] KOHYAMA T, MIURA K. A novel filter screening methodology for Si hardmask materials in EUV lithography[C]// Advances in Patterning Materials and Processes XXXVII. San Jose, USA. SPIE, 2020: 49.

[129] KOHYAMA T, JABER J A. Selective contaminant removal in EUV photoresists using a tailored functionality filter[C]// Advances in Patterning Materials and Processes XXXIX. San Jose, USA. SPIE, 2022.

[130] YOKOYAMA R, UI A, DAWYDIAK C, et al. Novel UPE filtration technology for advanced photolithography materials[C]// Advances in Patterning Materials and Processes XL. San Jose, USA. SPIE, 2023.

[131] MIURA K, KOHYAMA T. NTD CARs purity developments toward single-print capability in EUV scanners[C]// Advances in Patterning Materials and Processes XLII: San Jose, California, USA. SPIE, 2025: 426-429.

[132] WU A W, XIA A N. An exploration of the use of fluoropolymers in photofiltration[C]// Advances in Patterning Materials and Processes XXXVI. San Jose, USA. SPIE, 2019.

[133] KOHYAMA T, CHANG S H, DOISE J, et al. Continued optimization of point-of-use filtration for metal oxide photoresists to reduce defect density[C]// Advances in Patterning Materials and Processes XL. San Jose, USA. SPIE, 2023: 8.

[134] ZHANG Y R, UMEDA T, SAKAKIBARA H, et al. Defectivity reduction in EUV resists through novel high-performance Point-Of-Use (POU) filters[C]// Advances in Patterning Materials and Processes XL. San Jose, USA. SPIE, 2023: 74.

[135] ZHANG H, WU A, WEI J, et al. Effect of nanofiltration on photochemical integrity[J]. Advances in Resist Materials and Processing Technology XXV, 2008: 69233H.

[136] CAPITANIO D. Advantages to point of use filtration of photoresists in reducing contamination on the wafer surface[C]// Advanced Semiconductor Manufacturing Conference and Workshop. Boston, MA, USA. IEEE, 2002: 247-251.

[137] SZMANDA C R, CAREY R J. Process for removing metal ions from organic photoresist solutions: US5674662[P]. 1997-10-07.

[138] HONDA K. Method for removing impurities from resist components and novolak resins: US5378802[P]. 1995-01-03.

[139] HONDA K. Method for removing metal impurities from resist components: US5446126[P]. 1995-08-29.

[140] GRONBECK D A, O’CONNELL K M, BURKE W A, et al. Process for removing heavy metal ions by ion exchange: US5702611[P]. 1997-12-30.

[141] CAREY R J, THACKERAY J W. Purification process: US5500127[P]. 1996-03-19.

[142] SZMANDA C R, CAREY R J. Purification process: US5443736[P]. 1995-08-22.

[143] 张卫杰, 陈金平, 于天君, 等. 光刻胶中金属离子的去除和定量分析[J]. 分析化学, 2021, 49(10): 1750-1757.

[144] ZHANG W J, CHEN J P, YU T J, et al. Removal and quantitative analysis of metal ions in photoresist[J]. Chinese Journal of Analytical Chemistry, 2021, 49(10): 1750-1757.

[145] HOU K C, OSTREICHER E A, SALE R D. Filter sheet and process for purifying photoresist composition employing the filter sheet: US6733677[P]. 2004-05-11.

[146] 王桂河, 吴迪. 新一代金属离子纯化器, 用于ppt级别光刻胶纯化[J]. 流程工业, 2024(7): 28-31.

[147] WANG G H, WU D. New generation metal ion purifier for ppt grade photoresist purification[J]. Process, 2024(7): 28-31.

[148] JABER J A, HAMZIK J, FILIPANCIC N, et al. Addressing metallic contaminants in the photochemical supply chain[C]// Advances in Patterning Materials and Processes XXXVII. San Jose, California, USA. SPIE, 2020: 1132613.

[149] MASUNAGA K, WATANABE S, FUKUSHIMA M, et al. Chemically amplified positive resist composition and resist pattern forming process: US20240377741[P]. 2024-11-14.

[150] YUKA S, MATSUMOTO T, SAKAKIBARA H. Photosensitive resin composition, method for producing resist pattern film, and method for producing plated formed product: US20220026802[P]. 2022-01-27.

[151] KIM H, KIM B, KWAKY, et al. Organic salt, photoresist composition including the same, and pattern formation method using the same: US20240201588[P]. 2024-06-20.

[152] FANG R, ZHU A, YAMADA Y. Metal purifiers specific to lithography related chemicals[J]. Journal of Photopolymer Science and Technology, 2023, 36(5): 411-416.

[153] HADA H, IWAI T, SHIMAZAKI M, et al. Process for producing photoresist composition, filter, coater and photoresist composition: US7771911[P]. 2010-08-10.

[154] YU C, LIN E T, TSENG C C, et al. Filter apparatus for semiconductor device fabrication process: US20250296052[P]. 2025-09-25.

[155] CHANG C P, LU K C, LI Y X. Fluid filtration for semiconductor processing: US20250161840[P]. 2025-05-22.

基金资助

国家自然科学基金(22306025)