微量Ni掺杂对铜锌锡硫硒薄膜电学性能的影响

Effect of Trace Ni-Doping on Electrical Properties of Cu₂ZnSn(S,Se)₄ Thin Films

摘要

为研究微量Ni掺杂对铜锌锡硫硒(Cu₂ZnSn(S,Se)₄)薄膜的结晶性、缺陷浓度和电学性能的影响,在不影响其他阳离子(铜、锌和锡)的前提下,引入微量Ni离子进入铜锌锡硫前驱体溶液中,经旋涂—烧结—硒化的制备流程,得到Ni掺杂的铜锌锡硫硒薄膜,并利用X射线衍射、Raman光谱仪、X射线光电子能谱、电感耦合等离子体光学发射光谱、扫描电子显微镜、紫外-可见分光光度计、Hall效应和导电原子力显微镜对其进行测试分析.结果表明,当Ni掺杂百分数为0.5%时,薄膜的结晶度最佳,不良缺陷Sn_Zn缺陷浓度降到最低,载流子浓度为3.58×10¹⁶ cm^-3,平均表面电流为4.67 nA,薄膜的电学性能达到最佳.

Abstract

In order to study the effect of trace Ni-doping on the crystallinity, defect concentration and electrical properties of Cu₂ZnSn(S,Se)₄ thin films, without affecting other cations (Cu, Zn and Sn), we introduced trace Ni ions into the Cu₂ZnSnS₄ precursor solution, and prepared the Ni-doped Cu₂ZnSn(S,Se)₄ films through a spin-coating, sintering and selenization process. We conducted testing and analysis by using X-ray diffraction, Raman spectroscopy, X-ray photoelectron spectroscopy, inductively coupled plasma optical emission spectrometry, scanning electron microscopy, UV-Vis spectrophotometry, Hall effect and conductive atomic force microscopy. The results show that when the Ni-doping percentage is 0.5%, the film achieves optimal crystallinity and the concentration of deleterious Sn_Zn defect is minimized. The carrier concentration is 3.58×10¹⁶ cm^-3, the average surface current is 4.67 nA, and the electrical properties of the film reach its optimum.

关键词

铜锌锡硫硒薄膜 / Ni掺杂 / 缺陷浓度 / 电学性能

Key words

Cu₂ZnSn(S,Se)₄ thin film / Ni-doping / defect concentration / electrical property

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基金资助

国家自然科学基金(62164010)