1700V高性能GaN HEMT电力开关器件研究

Research on 1700V High Performance GaN HEMT Power Switching Devices

摘要

GaN材料具有高禁带宽度、高电子迁移率、高热导率、较好的化学稳定性等优势，因此GaN基HEMT电力电子器件在功率开关应用中具备高耐压、低损耗、高开关速度、高温特性好、抗辐照效应好等特点，但是目前面向功率开关应用的GaN器件并未完全发挥出其特性优势，主要体现在目前GaN材料体系的击穿特性已得到充分挖掘，但是基于GaN器件的功率开关应用主要集中在100~650 V的中低压级别，在高压级别的功率开关领域应用较少。针对此问题，论文对面向功率开关应用的新型GaN基HEMT电力电子器件展开深入研究。论文在硅衬底上制备出了横向击穿电压超过1700V，高达1740V的GaN HEMT器件。

Abstract

GaN materials have the advantages of high band-gap width, high electron mobility, high thermal conductivity and good chemical stability. Therefore, GaN based HEMT power electronic devices have the characteristics of high voltage resistance, low loss, high switching speed, high temperature characteristics and good anti-irradiation effect in power switching applications. However, the current GaN devices for power switching applications have not fully played their characteristic advantages, mainly reflected in: at present, the breakdown characteristics of GaN material systems have been fully explored, but the power switching applications based on GaN devices are mainly concentrated in the 100~650 V middle and low voltage level, and the applications in the high-voltage level power switching field are less. To solve this problem, the novel GaN based HEMT power electronic devices for power switching applications are studied in this paper. GaN HEMT devices with lateral breakdown voltage over 1700V and up to 1740V were prepared on silicon substrate.

关键词

GaN基HEMT电力电子器件 / 1740V / 薄缓冲 / 降低成本

Key words

GaN based HEMT power electronic device / 1740V / thin buffer / reduce cost

参考文献

[1] Sharbati S, Ebel T, Franke W T. Design of E-mode GaN HEMTs by the polarization super junction (PSJ) technology[J]. Microelectronics Reliability, 2020, 114(11):113907.

[2] Ma Y, Xiao M, Du Z, et al. Tri-gate GaN junction HEMT[J]. Applied Physics Letters, 2020, 117(14):143506.

[3] Gupta G, Kanamura M, Swenson B, et al.1 200V GaN switches on sapphire substrate[C]. 2022 IEEE 34th International Symposium on Power Semiconductor Devices and ICs (ISPSD), IEEE,2022:349-352.