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摘要
碲烯作为后石墨烯时代极具潜力的新兴二维材料,凭借其独特的螺旋链层状晶体结构、可调带隙特性、高载流子迁移率及优异的中红外光电响应与热电性能,在新一代电子与光电器件领域展现出巨大应用前景。范德华异质结通过非共价键作用力将不同二维材料精准堆叠,为突破单一材料性能瓶颈、实现界面工程调控与多功能集成提供了创新途径。本文系统梳理碲烯范德华异质结研究进展,阐述其构建原理与分类,剖析界面电荷转移、能带对齐等核心机制,及外场与缺陷工程对电子输运、光电转换等物性的调制规律。介绍其在场效应晶体管、中红外探测器、储能器件等领域的应用探索,总结制备、界面调控、稳定性及集成方面的挑战,展望通过多元设计与技术创新推动其在5G/6G、红外成像等领域实用化突破,为基础研究与应用转化提供参考。
Abstract
As a highly promising emerging two-dimensional material in the post-graphene era, tellurene exhibits enormous application potential in next-generation electronic and optoelectronic devices, attributed to its distinctive helical chain layered crystal structure, tunable bandgap characteristics, high carrier mobility, and superior mid-infrared photoelectric response as well as thermoelectric performance. Van der Waals heterojunctions, which enable precise stacking of diverse two-dimensional materials via non-covalent interactions, offer an innovative strategy to overcome the performance limitations of single-component materials, achieve interface engineering regulation, and realize multi-functional integration. This paper systematically reviews the research advances in tellurene-based van der Waals heterojunctions, elaborates on their construction principles and classification systems, and dissects core mechanisms including interfacial charge transfer and energy band alignment. Moreover, it clarifies the modulation rules of external field regulation and defect engineering on key physical properties such as electron transport and photoelectric conversion. The application explorations in field-effect transistors, mid-infrared detectors, and energy storage devices are introduced. Furthermore, the current challenges in large-area high-quality fabrication, precise interface regulation, stability enhancement, and device-scale integration are summarized. Finally, the prospect of achieving practical breakthroughs in 5G/6G communications, infrared imaging, new energy, and other high-tech fields through multi-component heterojunction design and advanced fabrication/characterization technology innovation is presented, providing comprehensive insights for fundamental research and application translation in this domain.
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江靖雯.
碲烯范德华异质结的物性研究与应用[J].
材料科学与应用技术, 2025, 4(3): 39-41 DOI:10.12349/msat.v4i3.7431
| [1] |
Novoselov, Kostya S., et al. Electric field effect in atomically thin carbon films. Science, 306.5696 ( 2004): 666-669.
|
| [2] |
Yao J, Chen F, Li J, et al. Mixed-dimensional Te/CdS van der Waals heterojunction for self-powered broadband photodetector. Nanotechnology, 32.41 ( 2021): 415201.
|
| [3] |
Wu K, Ma H, Gao Y, et al. Highly-efficient heterojunction solar cells based on two-dimensional tellurene and transition metal dichalcogenides. Journal of Materials Chemistry A, 7.13 ( 2019): 7430-7436.
|
| [4] |
Cheng Yue, et al. Multifunctional optoelectronic devices based on two-dimensional tellurium/MoS2 heterojunction. Applied Physics Letters, 125.17 ( 2024).
|
| [5] |
Bach, Thi Phuong Anh, et al. 2D van der Waals heterostructure with tellurene floating-gate for wide range and multi-bit optoelectronic memory. ACS nano, 18.5 ( 2024): 4131-4139.
|
| [6] |
Yang Hengyu, et al. “A ternary composite with TeO2/Te heterostructure towards reversible six-electron transfer for advanced aqueous zinc batteries.” Chemical Engineering Journal 507 ( 2025): 160410.
|
| [7] |
Wu W, Qiu G, Wang Y, et al. Tellurene: its physical properties, scalable nanomanufacturing, and device applications. Chemical Society Reviews, 47.19 ( 2018): 7203-7212.
|
| [8] |
Zeng L H, Lin S H, Li Z J, et al. Fast, self-driven, air-Stable, and broadband photodetector based on vertically aligned PtSe2/GaAs heterojunction. Advanced Functional Materials, 28.16 ( 2018): 1705970.
|
| [9] |
Zhu Z, Cai X, Yi S, et al. Multivalency-driven formation of Te-based monolayer materials: a combined first-principles and experimental study. Physical review letters, 119.10 ( 2017): 106101.
|
| [10] |
He Z, Yang Y, Liu J W, et al. Emerging tellurium nanostructures: controllable synthesis and their applications. Chemical Society Reviews, 46.10 ( 2017): 2732-2753.
|
| [11] |
Wang Y, Qiu G, Wang R, et al. Field-effect transistors made from solution-grown two-dimensional tellurene. Nature Electronics, 1.4 ( 2018): 228-236.
|
| [12] |
Berweger S, Qiu G, Wang Y, et al. Imaging carrier inhomogeneities in ambipolar tellurene field effect transistors[J]. Nano letters, 19.2 ( 2019): 1289-1294.
|
基金资助
感谢广东省普通高校特色创新项目(2023KTSCX371)