面向50μm以下超薄硅片的磨削与抛光工序协同优化研究

Research on the Coordinated Optimization of Grinding and Polishing Processes for Ultra-thin Silicon Wafers below 50μm

摘要

随着集成电路制造向高集成度与低功耗方向发展，硅片减薄已成为提升器件性能与封装可靠性的关键工艺环节。50μm以下超薄硅片在磨削与抛光过程中易产生翘曲、微裂纹及残余应力集中等问题，对加工工艺的协同性提出了更高要求。围绕超薄硅片加工质量稳定性与良率提升目标，系统分析磨削与抛光两道核心工序在材料去除机理、表面损伤演化及应力释放方面的内在关联，探讨关键工艺参数对损伤层厚度、表面粗糙度和平整度的综合影响。通过构建磨抛工序协同优化思路，强调磨削表面状态对抛光效率与质量一致性的约束作用，为50μm以下超薄硅片实现低损伤、高稳定性的精密加工提供理论依据与技术支撑。

Abstract

With the development of integrated circuit manufacturing toward higher integration density and lower power consumption, wafer thinning has become a key process for improving device performance and packaging reliability. Ultra-thin silicon wafers with thicknesses below 50μm are prone to warpage, micro-cracks, and residual stress concentration during grinding and polishing, which places higher demands on process coordination. Focusing on the stability of processing quality and yield improvement of ultra-thin silicon wafers, this study systematically analyzes the intrinsic relationships between the two core processes of grinding and polishing in terms of material removal mechanisms, surface damage evolution, and stress release behavior, and discusses the comprehensive effects of key process parameters on damage layer thickness, surface roughness, and flatness. By establishing a collaborative optimization strategy for the grinding and polishing processes, the constraining role of grinding-induced surface conditions on polishing efficiency and quality consistency is emphasized, providing theoretical foundations and technical support for achieving low-damage and high-stability precision machining of ultra-thin silicon wafers below 50μm.

关键词

超薄硅片 / 磨削工序 / 抛光工序 / 协同优化 / 表面质量

Key words

Ultra-thin silicon wafer / Grinding process / Polishing process / Collaborative optimization / Surface quality

参考文献

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