高硅铝壳体微波组件控氢方法的研究

Research on Hydrogen Control Methods for High-Silicon Aluminum Microwave Component Housings

摘要

砷化镓类半导体因其优良性能广泛应用于多芯片微波组件中。然而，组件内部的氢气对砷化镓类微波器件影响显著，可能导致性能退化和故障。本文通过实验研究了吸氢材料和真空烘烤两种方法在高硅铝壳体微波组件中的控氢效果。研究表明，吸氢材料能够有效吸收和固定氢气，显著降低组件内部的氢含量。同时，真空烘烤在不同温度和时间条件下对氢含量也有显著影响。结合两种方法，氢含量可以降至极低水平，从而提高组件的性能和可靠性。

Abstract

Gallium arsenide (GaAs) semiconductors are widely used in multi-chip microwave components due to their excellent performance. However, hydrogen within the component’s atmosphere significantly impacts GaAs microwave devices, potentially causing performance degradation and failure. This study explores the effectiveness of hydrogen getters and vacuum baking methods in controlling hydrogen levels in high-silicon aluminum microwave component housings. The research shows that hydrogen getters can effectively absorb and immobilize hydrogen, significantly reducing the hydrogen content inside the components. Additionally, vacuum baking at different temperatures and durations also significantly affects hydrogen levels. Combining these two methods can reduce hydrogen content to very low levels, thereby enhancing the performance and reliability of the components.

关键词

吸氢材料 / 去氢 / 高硅铝 / 微波组件 / 真空烘烤

Key words

Hydrogen getters / Dehydrogenation / High-silicon / aluminum / Microwave components / Vacuum baking

参考文献

[1] Roberto Murri, Nicola Pinto, Luigi Schiavulli, Ryoji Fukuhisa, Luciana Mirenghi. The influence of hydrogen on the electrical properties of a-GaAs[J]. Materials Chemistry and Physics, 1993, 33(1-2): 150-157.

[2] 汪悦, 张素娟. 氢对金属封装密封元器件可靠性的影响[J]. 电子元器件的可靠性, 2009, 27(06):5-9.

[3] 沈彤茜, 高金环, 黄杰, 彭浩. 微波模块氢效应研究综述[J]. 信息技术与标准化, 2018(8):61-64.

[4] 崔西会, 方杰, 许冰, 李元朴, 王辉, 李波. 微波产品除氢工艺方法[J]. 电子工程技术, 2020, 41(5):264-266.

[5] 杨程, 胡骏, 金家富, 满海峰, 周演飞. 吸氢剂在多芯片微波组件中的应用研究[C]. 广州:2019年全国微波毫米波会议论文集(下册), 2019.278-281.