忆阻器等效模型及其在高阶有源滤波电路中的应用

The equivalent model of memristor and its application in high order active filter circuit

摘要

针对忆阻器实物制备困难、基于忆阻器的滤波电路设计及性能调控存在挑战等问题，本文采用理论分析、模型构建、仿真与实验验证相结合的方法，对忆阻器等效电路、基于忆阻器的有源高通滤波电路及忆阻器可编程性展开研究。设计了单端接地和通用型两种忆阻器等效电路，模拟忆阻器基本电学特性；构建了一阶、二阶和四阶有源高通滤波电路，分析不同阶数电路的滤波效果。结果表明，所设计的等效电路可有效替代忆阻器，高阶滤波电路滤波效果更优，通过改变忆阻值可动态调整截止频率。研究得出忆阻器在滤波电路中具有良好应用潜力的结论，为解决忆阻滤波电路设计难题提供了可行方案。

Abstract

To address challenges in physical fabrication of memristors and design/performance optimization of memristor-based filter circuits, this study employs a comprehensive approach integrating theoretical analysis, model development, simulation, and experimental validation. The research focuses on three key aspects: equivalent circuit design for memristors, active high-pass filter circuits utilizing memristors, and programmability enhancement of memristors. Two types of equivalent circuits-single-ended grounded and universal configurations-are designed to simulate fundamental memristor electrical characteristics. Additionally, first-order, second-order, and fourth-order active high-pass filter circuits are constructed to evaluate their filtering performance across different orders. Results demonstrate that the proposed equivalent circuits effectively replace traditional memristors, with higher-order filters exhibiting superior performance. Notably, the cutoff frequency can be dynamically adjusted by modifying the memristor resistance value. These findings establish memristors as promising candidates for filter circuit applications, providing a practical solution to design challenges in memristor-based filter circuits.

关键词

忆阻器 / 等效电路 / 滤波电路 / 截止频率 / 可编程性

Key words

memristor / equivalent circuit / filter circuit / cutoff frequency / programmability

参考文献

[1] Chua L. Memristor-the missing circuit element[J]. IEEE Transactions on circuit theory, 1971, 18(5); 507-519.

[2] Strukov DB, Snider GS, Stewart DR, et al. The missing memristor found[J]. nature, 2008, 453(7191): 80-83.

[3] Rose GS . Overview: Memristive devices, circuits and systems[C]. in: Paris, eds. Proceedings of 2010 IEEE International Symposium on Circuits and Systems. France: IEEE, 2010: 1955-1958.

[4] Merrikh-Bayat F, Shouraki SB. Memristor-based circuits for performing basic arithmetic operations[J]. Procedia Computer Science, 2011, 3: 128-132.

[5] Joglekar YN, Wolf SJ. The elusive memristor: properties of basic electrical circuits[J]. European Journal of physics, 2009, 30(4): 661-663.

[6] Pershin YV, Di Ventra M. Memristive circuits simulate memcapacitors and meminductors[J]. Electronics Letters, 2010, 18(6): 517-518.

[7] 蔡少棠. 非线性网络理论引论下册[M].(虞厥邦).北京:人民教育出版社, 1981: 100-108

[8] 蔡少棠. 非线性电路理论[M].(刘小河).北京:人民教育出版社, 2009: 35-45

[9] 李祎. 基于硫系化合物的类神经元突触的认知存储器件研究[D].武汉:华中科技大学, 2014.

[10] 张金箭. 碲基硫系化合物材料的忆阻特性研究[D].武汉:华中科技大学, 2014.

[11] 董哲康. 基于忆阻器的组合电路及神经网络研究[D].成都:西南大学, 2015.

[12] 刘明. 新型阻变存储技术[M].北京:科学出版社, 2014: 78-83.

[13] Zhang W, Yao P, Gao B, et al. Edge learning using a fully integrated neuro-inspired memristor chip[J]. Science, 2023, 381(6663): 1205-1211.